hmic? silicon sp4t pin diode switch rev. v4 masw - 004100 - 1193 1 1 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 1 features ? broad bandwidth ? specified from 50 mhz to 20.0 ghz ? usable from 50 mhz to 26.5 ghz ? lower insertion loss / higher isolation ? fully monolithic, glass encapsulated chip ? up to +33 dbm cw power handling @ +25c ? rohs* compliant description the masw - 004100 - 1193 is a sp4t, series - shunt, broadband, pin diode switch made with macoms patented hmic tm (heterolithic microwave integrated circuit) process. this process allows the silicon pedestals which form the series - shunt diodes and vias to be embedded into low loss, low dispersion glass. by incorporating small spacing between circuit elements, the result is an hmic chip with low insertion loss and high isolation at frequencies up to 26.5 ghz. it is designed to be used as a moderate power, high performance switch and provide superior performance when compared to similar designs that use discrete components. the top side of the chip is protected by a polymer coating for manual or automatic handling and large gold bond pads help facilitate connection of low inductance ribbons. the gold metallization on the backside of the chip allows for attachment via 80/20, gold/tin solder or conductive silver epoxy. the masw - 004100 - 1193 is a high performance switch suitable for use in multi - band ecm, radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. with a standard 5 v, ttl controlled, pin diode driver, 50 ns switching speeds are achievable. ordering information *restrictions on hazardous substances, european union directive 2011/65/eu. functional diagrams part number package xx = 0g package xx = 0w masw - 004100 - 1193(xx) gel pack waffle pack j 1 j 5 j 2 j 3 j 4
hmic? silicon sp4t pin diode switch rev. v4 masw - 004100 - 1193 2 2 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 2 electrical specifications: t a = 25c, 20 ma (on - wafer measurements) parameter test conditions units min. typ. max. insertion loss 20 ghz db 0.9 1.3 isolation 20 ghz db 28 34 input return loss 20 ghz db 15 output return loss 20 ghz db 15 switching speed 1 10 ghz ns 50 absolute maximum ratings 2,3,4 parameter absolute maximum rf cw incident power +33 dbm reverse voltage - 25 v bias current per port 50 ma @ +25c operating temperature - 65c to +125c storage temperature - 65c to +150c 2. exceeding any one or combination of these limits may cause permanent damage to this device. 3. macom does not recommend sustained operation near these survivability limits. 4. maximum operating conditions for a combination of rf power, dc bias and temperature: +33 dbm cw @ 15 ma (per diode) @ +85c. handling procedures please observe the following precautions to avoid damage: static sensitivity these electronic devices are sensitive to electrostatic discharge (esd) and can be damaged by static electricity. proper esd control techniques should be used when handling these class 0 (hbm) and class c1 (cdm).devices. 1. typical switching speed is measured from (10% to 90% and 90% to 10% of detected rf voltage), driven by ttl compatible drivers . i n the modulating state, (the switching port is modulating, all other ports are in steady state isolation.) the switching speed is m eas ured using an rc network using the following values: r = 50 - 200 , c = 390 - 1000 pf. driver spike current, i c = c dv/dt, ratio of spike current to steady state current, is typically 10:1.
hmic? silicon sp4t pin diode switch rev. v4 masw - 004100 - 1193 3 3 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 3 typical performance curves: isolation vs. frequency insertion loss vs. frequency input return loss vs. frequency output return loss vs. frequency -2.0 -1.6 -1.2 -0.8 -0.4 0.0 0 5 10 15 20 25 30 j2 j3 j4 j5 s21 (db) frequency (ghz) -80 -70 -60 -50 -40 -30 0 5 10 15 20 25 30 j2 j3 j4 j5 s21 (db) frequency (ghz) -50 -40 -30 -20 -10 0 0 5 10 15 20 25 30 j2 j3 j4 j5 s11 (db) frequency (ghz) -50 -40 -30 -20 -10 0 0 5 10 15 20 25 30 j2 j3 j4 j5 s22 (db) frequency (ghz)
hmic? silicon sp4t pin diode switch rev. v4 masw - 004100 - 1193 4 4 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 4 typical 2 - 18 ghz bias network typical driver connections operation of the masw - 004100 - 1193 pin switch the simultaneous application of a negative dc current to the low loss port and positive dc current to the isolated ports as shown below in fig.1 is required for proper operation of the switch. the backside area of the die is the rf and dc ground return and the dc return is through the common port j1. a constant current source should be used to supply the dc control currents. the control voltages at these points will not exceed 1.5 volts for supply currents up to 20 ma. in the low loss state, the series diode must be forward biased and the shunt diode reverse biased. on all isolated ports, the shunt diode is forward biased and the series diode is reverse biased. a typical bias network design that will produce >30 db rf to dc isolation is shown below in figure 1 . the optimum insertion loss, p1db, ip3, and switching speed are attained by using a voltage pull - up resistor in the dc return path, j1. a minimum value of | - 2v| is recommended using a standard, 5 v ttl controlled pin driver such as macoms madr - 009190 - 000100. compatible macom driver madr - 009190 - 000100 dc control current (ma) rf output states j3 j4 j5 j1 - j2 j1 - j3 j1 - j4 j2 j1 - j5 +20 +20 +20 low loss isolation isolation - 20 isolation - 20 +20 +20 isolation low loss isolation +20 isolation +20 - 20 +20 isolation isolation low loss +20 isolation +20 +20 +20 - 20 isolation isolation isolation low loss fig. 1 1 0 0 ? 3 9 p f 2 2 n h 2 2 p f 3 9 p f j 1 m a 4 s w 4 1 0 2 2 n h 2 2 p f j 2 j 3 j 4 j 5 d c b i a s ( 1 . 2 v t y p . )
hmic? silicon sp4t pin diode switch rev. v4 masw - 004100 - 1193 5 5 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 5 masw - 004100 - 1193 chip dimensions 5,6 5. topside and backside metallization is gold, 2.5 m thick typical. 6. yellow areas indicate wire bonding pads. a i j c d e b f g h all tolerances are .0005 inches dim nominal inches mm a 0.066 1.67 b 0.047 1.19 c 0.054 1.37 d 0.012 0.31 e 0.043 1.08 f 0.009 0.22 g 0.004 0.11 h 0.004 0.11 i 0.033 0.84 j 0.061 1.56 thickness 0.005 .120 bond pads 0.005 x 0.005 0.120 x 0.120
hmic? silicon sp4t pin diode switch rev. v4 masw - 004100 - 1193 6 6 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 6 cleanliness the chips should be handled in a clean environment free of dust and organic contamination. wire / ribbon bonding thermo compression wedge bonding using 0.003 x 0.00025 ribbon or 0.001 diameter gold wire is recommended. a work stage temperature of 150c - 200c, tool tip temperature of 120c - 150 and a downward force of 18 to 22 grams should be used. if ultrasonic energy is necessary, it should be adjusted to the minimum level required to achieve a good bond. excessive power or force will fracture the silicon beneath the bond pad causing it to lift. rf bond wires and ribbons should be kept as short as possible for optimum rf performance. chip mounting hmic switches have ti - pt - au backside metallization and can be mounted using a gold - tin eutectic solder or conductive epoxy. mounting surface must be free of contamination and flat. eutectic die attachment an 80/20, gold - tin, eutectic solder is recommended. adjust the work surface temperature to 255 o c and the tool tip temperature to 265 o c. after placing the chip onto the circuit board re - flow the solder by applying hot forming gas (95/5 ni/h) to the top surface of the chip. temperature should be approximately 290 o c and not exceed 320 o c for more than 20 seconds. typically no more than three seconds is necessary for attachment. solders rich in tin should be avoided epoxy die attachment a minimum amount of epoxy, 1 - 2 mils thick, should be used to attach chip. a thin epoxy fillet should be visible around the outer perimeter of the chip after placement. epoxy cure time is typically 1 hour at 150c.
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